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GaN HEMTs are field-effect transistors (FETs) that can switch faster than silicon power transistors. This feature, combined with GaN HEMTs' small footprint, allows the devices to be more energy-efficient while creating more space for external components.
Market Analysis and Insights: Global GaN Hemt Market
Due to the COVID-19 pandemic, the global GaN Hemt market size is estimated to be worth US$ million in 2022 and is forecast to a readjusted size of US$ million by 2028 with a CAGR of % during the review period. Fully considering the economic change by this health crisis, Low Voltage accounting for % of the GaN Hemt global market in 2021, is projected to value US$ million by 2028, growing at a revised % CAGR in the post-COVID-19 period. While Aerospace segment is altered to an % CAGR throughout this forecast period.
North America GaN Hemt market is estimated at US$ million in 2021, while Europe is forecast to reach US$ million by 2028. The proportion of the North America is % in 2021, while Europe percentage is %, and it is predicted that Europe share will reach % in 2028, trailing a CAGR of % through the analysis period. As for the Asia, the notable markets are Japan and South Korea, CAGR is % and % respectively for the next 6-year period.
The global major manufacturers of GaN Hemt include Infineon Technologies AG, Qorvo, TI, Toshiba, Innoscience, Sumitomo Electric, Teledyne Technologies Incorporated, Mitsubishi Electric Corp and STMicroelectronics, etc. In terms of revenue, the global 3 largest players have a % market share of GaN Hemt in 2021.
Global GaN Hemt Market: Drivers and Restrains
The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2017 to 2028. This section mentions the volume of production by region from 2017 to 2028. Pricing analysis is included in the report according to each type from the year 2017 to 2028, manufacturer from 2017 to 2022, region from 2017 to 2022, and global price from 2017 to 2028.
A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.
Global GaN Hemt Market: Segment Analysis
The research report includes specific segments by region (country), by manufacturers, by Type and by Application. Each type provides information about the production during the forecast period of 2017 to 2028. by Application segment also provides consumption during the forecast period of 2017 to 2028. Understanding the segments helps in identifying the importance of different factors that aid the market growth.
Segment by Type
Low Voltage
Medium Voltage
High Voltage
Segment by Application
Aerospace
Military
Electronic
Mobile Communication
Others
By Company
Infineon Technologies AG
Qorvo
TI
Toshiba
Innoscience
Sumitomo Electric
Teledyne Technologies Incorporated
Mitsubishi Electric Corp
STMicroelectronics
Wolfspeed
MACOM Technology
Transphom
Jiangsu Corenergy
Production by Region
North America
Europe
China
Japan
South Korea
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
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